? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 30 a, v ge = 15 v t j = 25 c 1.9 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c110 t c = 110 c33a i f110 t c = 110 c (IXGR40N60B2D1) 25 a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @ 600 v p c t c = 25 c 167 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz rms, t = 1m 2500 v maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6g ds99162a(05/04) g = gate, c = collector, e = emitter isoplus247 (ixgr) v ces = 600 v i c25 = 75 a v ce(sat) = 1.9 v t fi typ = 82 ns d1 ixgr 40n60b2 ixgr 40n60b2d1 hiperfast tm igbt isoplus247 tm c2-class high speed igbts (electrically isolated back surface) optimized for 10-25 khz hard switching and up to 150 khz resonant switching features z dcb isolated mounting tab z meets to-247ad package outline z high current handling capability z latest generation hdmos tm process z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications e153432 preliminary data sheet c e (isolated tab) g
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 40n60b2 ixgr 40n60b2d1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 30 a; v ce = 10 v, 20 36 s pulse test, t 300 s, duty cycle 2 % c ies 2560 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 210 pf c res 54 pf q g 100 nc q ge i c = 30 a, v ge = 15 v, v ce = 300 v 15 nc q gc 36 nc t d(on) 18 ns t ri 20 ns t d(off) 130 200 ns t fi 82 150 ns e off 0.4 0.8 mj t d(on) 18 ns t ri 20 ns e on 0.3 mj t d(off) 240 ns t fi 150 ns e off 1.10 mj r thjc 0.75 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 30 a, v ge = 15 v v ce = 400 v, r g = 3.3 ? inductive load, t j = 125 c i c = 30 a, v ge = 15 v v ce = 400 v, r g = 3.3 ? reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 30 a, v ge = 0 v, pulse test t j =150 c 1.6 v t 300 s, duty cycle d 2 % 2.5 v i rm i f = 30 a, v ge = 0 v, -di f /dt =100 a/ s, t j = 100 c4a t rr v r = 100 v t j = 100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 25 n s r thjc 0.9 1.1 k/w isoplus 247 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 120 150 180 210 01234567 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0.511.522.53 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 30a i c = 15a v ge = 15v i c = 60a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1 1.5 2 2.5 3 3.5 4 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 60a 30a 15a fig. 6. input adm ittance 0 30 60 90 120 150 180 3456 78910 v g e - volts i c - amperes t j = 125oc 25oc -40oc ixgr 40n60b2 ixgr 40n60b2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 40n60b2 ixgr 40n60b2d1 fig. 7. transconductance 0 10 20 30 40 50 60 0 30 60 90 120 150 180 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3 6 9 1215 1821242730 r g - ohms e off - millijoules i c = 15a t j = 125oc v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 9. dependence of turn-off en e r g y on i c 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 60a r g = 3.3 ? v ge = 15v v ce = 400v i c = 30a i c = 15a fig. 11. dependence of turn-off sw itching time on r g 100 150 200 250 300 350 400 450 500 550 600 3 6 9 12151821242730 r g - ohms switching time - nanosecond i c = 30a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 400v i c = 15a i c = 60a fig. 12. dependence of turn-off sw itching tim e on i c 75 100 125 150 175 200 225 250 275 300 15 20 25 30 35 40 45 50 55 60 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved ixgr 40n60b2 ixgr 40n60b2d1 fig. 14. gate charge 0 3 6 9 12 15 0 1020 3040 50 6070 8090100 q g - nanocoulombs v g e - volts v ce = 300v i c = 30a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 75 100 125 150 175 200 225 250 275 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanosecond t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 13. maximum transient thermal resistance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 40n60b2 ixgr 40n60b2d1 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 2x31-06b i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 19 peak reverse current i rm versus -di f /dt fig. 18 reverse recovery charge q r versus -di f /dt fig. 17 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 20 dynamic parameters q r , i rm versus t vj fig. 21 recovery time t rr versus -di f /dt fig. 22 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 23 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.436 0.0055 2 0.482 0.0092 3 0.117 0.0007 4 0.115 0.0418 906 t vj =25c t vj =100c t vj =150c
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